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Inventi Impact: Optical Technologies

Articles

  • Inventi:eot/18/12
    EFFECT OF ETCHING TIME ON OPTICAL AND THERMAL PROPERTIES OF P-TYPE POROUS SILICON PREPARED BY ELECTRICAL ANODISATION METHOD
    31-Mar-2012 Research 2012 : April - June
    Kasra Behzad,Wan Mahmood Mat Yunus, Zainal Abidin Talib, Azmi Zakaria,\r\nAfarin Bahrami, Esmaeil Shahriari

    The porous silicon (PSi) layers were formed on p-type silicon (Si) wafer. The six samples were anodised electrically with 30 mA/cm2\r\nfixed current density for different etching times. The structural, optical, and thermal properties of porous silicon on silicon\r\nsubstrates were investigated by photoluminescence (PL), photoacoustic spectroscopy (PAS), and UV-Vis-NIR spectrophotometer.\r\nThe thickness and porosity of the layers were measured using the gravimetric method. The band gap of the samples was measured\r\nthrough the photoluminescence (PL) peak and absorption spectra, then they were compared. It shows that band gap value increases\r\nby raising the porosity. Photoacoustic spectroscopy (PAS) was carried out for measuring the thermal diffusivity (TD) of the\r\nsamples.

    How to Cite this Article
    CC Compliant Citation: Kasra Behzad, Wan Mahmood Mat Yunus, Zainal Abidin Talib, Azmi Zakaria, Afarin Bahrami, and Esmaeil\r\nShahriari, â??Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation\r\nMethod,â? Advances in Optical Technologies, vol. 2012, Article ID 581743, 9 pages, 2012. doi:10.1155/2012/581743.
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